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Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric

Published online by Cambridge University Press:  17 March 2011

R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
B. Coenegrachts
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
E. Sleeckx
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Schaekers
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Sophie
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
N. Matsuki
Affiliation:
ASM Japan, 6-23-1, Nagayama, Tama, Tokyo, Japan
M. R. Baklanov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Struyf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Lepage
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Vanhaelemeersch
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Beyer
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Stucchi
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
D. De Roest
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC and E.E. Department, K. U. Leuven, Belgium
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Abstract

AURORA films, which have a Si-O-Si network with –CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 µm.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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