Skip to main content Accessibility help

Characteristics of ZnO Thin Film for the Resistive Random Access Memory

  • Jung Won Seo (a1), Seung Jae Baik (a2), Sang Jung Kang (a3) and Koseng Su Lim (a4)


We report resistive switching characteristics in Pt/ZnO/Pt devices where ZnO thin film is fabricated at various oxygen conditions. With the increase of oxygen contents in ZnO thin film, the forming voltage is gradually increased while reset and set voltages are almost unchanged. We also investigated the effect of top electrodes on resistive switching of top electrode/ZnO/Pt device. For a Pt/ZnO/Pt device, it exhibits the excellent resistive switching behavior due to high electrical field of the well-defined Schottky barrier. For Al/ZnO/Pt device, little resistive switching phenomena were occurred due to leakage current of the weak Schottky (or Ohmic) contact.



Hide All
1 Liu, S. Q., Wu, N. J., and Ignatiev, A., Appl. Phys. Lett. 76, 2749 (2000).10.1063/1.126464
2 Watanabe, Y., Bednorz, J. G., Bietsch, A., Gerber, Ch., Widmer, D., Beck, A., and Wind, S. J., Appl. Phys. Lett. 78, 3738 (2001).10.1063/1.1377617
3 Lai, Y. S., Tu, C. H., Kwong, D. L., and Chen, J. S., Appl. Phys. Lett. 87, 122101 (2005).10.1063/1.2051801
4 Villafuerte, M., Heluani, S. P., Juarez, G., Simonelli, G., Braunstein, G., and Duhalde, S., Appl. Phys. Lett. 90, 052105 (2007).10.1063/1.2437688
5 Jeong, D. S., Schroeder, H., and Waser, R., Appl. Phys. Lett. 89, 082909 (2006).
6 Seo, J. W., Park, J-W., Lim, K. S., Kang, S. J., Hong, Y. H., Yang, J-H., Fang, L., Sung, G. Y., and Kim, H-K., Appl. Phys. Lett. 95, 133508 (2009).10.1063/1.3213390
7 Chang, W-Y., Lai, Y-C., Wu, T-B., Wang, S-F., Chen, F., and Tsai, M-J., Appl. Phys. Lett. 92, 022110 (2008).
8 Seo, J. W., Park, J-W., Lim, K. S., J-H, Yang, and Kang, S. J., Appl. Phys. Lett. 93, 223505 (2008)10.1063/1.3041643
9 Park, J-W., Park, J-W., Kim, D-Y., and Lee, J-K., J. Vac. Sci. Technol. 23, 1309 (2005).10.1116/1.1953687
10 Lide, D. R., CRC handbook on Chemistry and Physics (CRC press, Florida, 2008)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *



Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed