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The Characteristics of the Lateral Thickness Modulation in Strained Layer GaxIn1-xAs Multiple Quantum Well Structures Grown by MOVPE

Published online by Cambridge University Press:  22 February 2011

X. Zhou ,
P. Charsley ,
A. D. Smith  and
A. T. R. Briggs
X. Zhou
Affiliation:
Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, UK
P. Charsley
Affiliation:
Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, UK
A. D. Smith
Affiliation:
BNR Europe Ltd, London Road, Harlow, Essex CM17 9NA, UK
A. T. R. Briggs
Affiliation:
BNR Europe Ltd, London Road, Harlow, Essex CM17 9NA, UK
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Abstract

Similar phenomena associated with the lateral thickness modulation have been observed in two different types of GaxIn1-x strained layer multiple quantum well structures grown on InP by MOVPE. The thickness modulations were always quasi-periodic and developed anisotropically in the [110] direction. It has been found that lattice distortions were caused by such thickness modulations, resulting probably in overall surface elastic relaxation. Once the thickness modulation had started at some stage of the growth, it would continue in the subsequent layer with approximately the same modulation period and an amplified amplitude. This is attributed to the effect of the lattice deformation at the growth surface on the deposition rate of the subsequent layer. The effect of such factors as the magnitude of strain, the growth temperature and the V/III gas ratio on the onset of the thickness modulation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 337
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCE

1. O'Reilly, E. P., Semiconductor Science & Technology 4, 121 (1989).Google Scholar
2. Thijs, P. J. A., Binsma, J. J., Tiemeijer, L. F. and Dongen, T. van, Electronic Letters 28, 829 (1992).Google Scholar
3. Miller, B. I., Koren, U., Young, M. G. and Chen, M. D., Appl. Phys. Lett. 58, 1952 (1991).Google Scholar
4. Ponchet, A., Rocher, A., Emery, J. Y. and Goldstein, L., Inst. Phys. Conf: Ser. No. 134 (IOP Publishing, Bristol, 1993), pp. 485–488.Google Scholar
5. Chu, S. N. G., Logan, R. A. and Tanbun-Ek, T., J. Appl. Phys. 72, 4118 (1992).Google Scholar
6. Cullis, A. G., Robbins, D. J., Pidduck, A. J. and Smith, P. W., J. Crystal Growth 123, 333 (1992).Google Scholar
7. Glas, F., J. Appl. Phys. 62, 3201 (1987).Google Scholar
8. Ceschin, A. M. and Massies, J., J. Crystal Growth 114, 693 (1991).Google Scholar