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Characteristics of the Blocking Layers in the a-Si:H Photoreceptor

Published online by Cambridge University Press:  28 February 2011

H. Kakinuma ,
S. Nishikawa ,
T. Watanabe  and
K. Nihei
H. Kakinuma
Affiliation:
Research Laboratory, Oki Electric Industry Co., Ltd., Higashiasakawa-cho 550–5, Hachioji-shi, Tokyo 193, Japan
S. Nishikawa
Affiliation:
Research Laboratory, Oki Electric Industry Co., Ltd., Higashiasakawa-cho 550–5, Hachioji-shi, Tokyo 193, Japan
T. Watanabe
Affiliation:
Research Laboratory, Oki Electric Industry Co., Ltd., Higashiasakawa-cho 550–5, Hachioji-shi, Tokyo 193, Japan
K. Nihei
Affiliation:
Research Laboratory, Oki Electric Industry Co., Ltd., Higashiasakawa-cho 550–5, Hachioji-shi, Tokyo 193, Japan
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Abstract

The effects of characteristics of the blocking layers in multilayered a-Si:H photoreceptors on electrophotographic properties are reported. The structure of the photoreceptor is Al/a-Si:H(p)/a-Si:H(i)/a-Si1−xCx. The thickness and boron doping ratio of the bottom p-type layer and the thickness and compositional fraction x of the surface a-Si1−xCx layer are varied. It is shown that the dark decay time is particularly sensitive to the thickness and doping ratio of the p-type layer. These dependences are discussed assuming a space charge layer in the p-type layer. It is also shown that the thickness and x of the a-Si1−xCx layer greatly influence the residual voltage and effective quantum efficiency of photocarrier generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 409
Copyright
Copyright © Materials Research Society 1985

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References

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