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Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

  • J.B. Cross (a1), M.A. Hoffbauer (a1), J.D. Farr (a1), O.J. Glembocki (a2) and V.M. Bermudez (a2)...

Abstract

Oxide layers that are thick (>200 Å and uniform have been produced on GaAs (110) and (100) by reacting the substrate (Ts<160°C) with high translational energy (1-3 eV) neutral atomic oxygen at flux levels of∼50 monolayers/second. The Ga and As species are formed in their highest oxidation states, which implies formation of either Ga2O3 and As2O5 or GaAsO4. Raman spectroscopy indicates that there is no metallic (amorphous or crystalline) As in the oxide or at the interface between the oxide and substrate and that there is no appreciable oxidation induced disorder of the substrate as is seen in high temperature thermal oxidation processes.

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Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2.8-eV Translational Energy Atomic Oxygen

  • J.B. Cross (a1), M.A. Hoffbauer (a1), J.D. Farr (a1), O.J. Glembocki (a2) and V.M. Bermudez (a2)...

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