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The characteristics of joints with Indium-silver alloy using diffusion soldering method

  • Je Yoon Kim (a1), Sang Won Park (a1), Jee Young Yoon (a1), Hwa Young Kim (a1), Dae Yeon Lee (a1), Gyu Tae Kim (a1), Man Young Sung (a2) and Ey Goo Kang (a3)...


Bonding process using indium-silver alloy which can withstand high temperature was investigated at relatively low temperature. We used a thermal evaporator and vacuum coater for making indium-silver contact. From the result of experiment, we observed that indium and silver films which have good quality are formed. From phase diagram of In-Ag alloy, we can find that melting point of these compounds increases with the silver content, i.e. eutectic (144° C) <AgIn2 (166° C) < (300° C) < (670° C) < (695° C). And these compounds are determined by the composition ratio of the source metal. Now we confirmed the thermal characteristics of Indium-Silver alloy is controlled by silver. Consequently we have developed Ag/In/Ag multi-layer composite which has higher melting point than that of normal contact. The melting point of Ag/In/Ag multi-layer is about 700° C. The joint cross-sections are studied using SEM(scanning electron microscopy) and EDX(Energy Dispersive X-rays). From these data, we observed that the composition and microstructure of Ag/In/Ag multi-layer were reliable and this bonding procedure is a better technique compared to the conventional structure of quantum well LED and GaN/Si LED structure was made by using sapphire for substrate and might be good for high temperature electronic devices in the future.



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  • EISSN: 1946-4274
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