Skip to main content Accessibility help
×
Home

Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition

  • C.J. Pinzone (a1), N. T. Ha (a2), N. D. Gerrard (a3), R. D. Dupuis (a1) and H. S. Luftman (a2)...

Abstract

Electronic and photonic device applications of the InGaAs/InP materials system often require the growth of epitaxial material doped to or near the solubility limit of the impurity in the host material. These requirements present an extreme challenge for the crystal grower. To produce devices with abrupt dopant profiles, preserve the junction during subsequent growth, and retain a high degree of crystalline perfection, it is necessary to understand the limits of dopant incorporation and the behavior of the impurity in the material.

In this study, N-type doping above 1019 cm-3 has been achieved in InP and InGaAs using Sn as a dopant P-type Zn doping at these levels has also been achieved in these materials but p type activation above ~3 × 1018 cm-3 in InP has not been seen. All materials were grown by the metalorganic chemical vapor deposition (MOCVD) crystal growth technique. Effective diffusion coefficients have been measured for Zn and Sn in both materials from analysis of secondary ion mass spectra (SIMS) of specially grown and annealed samples.

Copyright

References

Hide All
1 Hayes, J. R., Bhat, R., Schumacher, H. and Koza, M., Electron. Lett. 2 (1987) p. 931
2 Temkin, H., Frahm, R. E., Olsonn, N. A., Burrus, C. A., and McCoy, R. J., Electron. Lett., 22 (1986) p. 1267
3 Deppe, D. G., Gerrard, N. D., Pinzone, C.J., Dupuis, R. D., Schubert, E. F., to be published in Appl. Phys. Lett.
4, 5, 6 Pinzone, C. J., Gerrard, N. D., Dupuis, R. D.,Ha, N. T., and Luftman, H. S. presented at the 31st Electronics Materials Conference, Cambridge, Mass., June21–23 1989, Paper R7; Electron. Lett. 25 19 (1989) p. 1315; accepted for publication J. Appl. Phys. Manuscript No.R-5407
7 Dupuis, R. D., Moudy, L. A., Dapkus, P. D. in Gallium Arsenide and Related Compounds 1978, edited by Wolfe, C. M. (Institute of Physics,Bristol, 1979) p. 1
8 van der Pauw, L. J., Philips Research Reports, 13 1 (1958)
9, 10 Nelson, A. W. and Westbrook, L. D., J. Appl. Phys. 55 8 (1984) p. 3103; J. Crys. Growth 68 (1984) p. 102
11 Chiu, T. H., Cunningham, J. E., Tell, B.,and Schubert, E. F., J.of Appl. Phys., 64 3 (1988) p. 1578
12 Sharma, B. L. Diffusion in Semiconductors. Trans Tech Publication, Germany, 1970 p. 13
13 van Gurp, G. J., van Dongen, T., Fontjin, G. M., Jacobs, J. M., and Tjaden, D. L. A., J. Appl. Phys. 65 2 (1989) p. 553
14 Kittel, C., Introduction to Solid State Physics 5th edition; J. Wiley and Sons, N.Y., 1976, p. 100

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed