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Characteristics of Dopant Activation by Sequential Lateral Solidification (SLS)

  • Yong-Hae Kim (a1), Choong-Yong Sohn (a1), Choong-Heui Chung (a1), Young-Wook Ko (a1) and Jin Ho Lee (a1)...

Abstract

The characteristics of dopant activation by sequential lateral solidification in poly-Si films is investigated using sheet resistance measurement and Raman measurement. Sheet resistance of n+ and p+ doped poly-Si films decreases exponentially as the laser energy increases. The minimum sheet resistance of n+ doped poly-Si films is 150 Ω/□ which is near to that of rapid thermal annealing (RTA) while the minimum sheet resistance of p+ doped poly-Si films is 180 Ω/□ which is less than a half to that of RTA. The sheet resistance of n+ and p+ doped poly-Si increases as the laser energy increases when the laser energy is above 573 mJ/cm2 at which the nucleation occurs. Raman signal of n+ doped poly-Si films shows single peak at 515 cm-1 with all laser energy and has maximum intensity at 566 mJ/cm2 laser energy. Raman signal of p+ doped poly-Si films shows single peak below 413 mJ/cm2 laser energy and double peak above 444 mJ/cm2 laser energy where the fully melting of p+ doped poly-Si film occurs.

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1. Brotherton, S. D., Ayres, J. R., Edwards, M. J., Fisher, C. A., Glaister, C., Gowers, J. P., McCullock, D. J., Trainor, M., Thin Solid Films 337, 188 (1999).10.1016/S0040-6090(98)01176-6
2. Im, J. S., Kim, H. J., Thompson, M. O., Appl. Phys. Lett. 63, 1969 (1993).10.1063/1.110617
3. Voutsas, A. T., Appl. Surf. Sci. 9602, 1 (2003).
4. Crowder, M. A., Moriguchi, M., Mitani, Y., Voutsas, A. T., Thin Solid Films 427, 101 (2003).10.1016/S0040-6090(02)01147-1
5. Kerrien, G., Hernandez, M., Laviron, C., Sarnet, T. Debarre, D., Noguchi, T., Zahorski, D., Venturini, J., Semeria, M. N. Boulmer, J., Appl. Surf. Sci. 9606, 1 (2003).
6. Kerrien, G., Boulmer, J., Debarre, D., Bouchier, D., Grouillet, A., Lenoble, D., Appl. Surf. Sci. 186, 45 (2002).10.1016/S0169-4332(01)00623-7
7. Lin, K. C., Peng, Y. C., Wang, L. M., Wang, W. T., AM-LCD ′01, 143 (2001).
8. Giust, G. K., Sigmon, T. W., IEEE Trans. Electro Devices 45, 925 (1998).10.1109/16.662804
9. Al-Nuaimy, E. A., Marshall, J. M., Appl. Phys. Lett. 69, 3857 (1996).10.1063/1.117128
10. Tseng, C. H., Lin, C. W., Teng, T. H., Chang, T. K., Cheng, H C., Chin, A., Solid-State Electron. 46, 1085 (2002).10.1016/S0038-1101(02)00046-1
11. Higashi, S., Ando, N., Kamisako, K., Sameshima, T., Jpn. J. Appl. Phys. 40, 731 (2001).10.1143/JJAP.40.731
12. Lengsfeld, P., Nickel, N. H., J. Non-Cryst solids 299–302, 778 (2002).10.1016/S0022-3093(01)00982-6
13. Lengsfeld, P., Nickel, N. H., Fuhs, W., Appl. Phys. Lett. 76, 1680 (2000).10.1063/1.126134
14. Nickel, N. H., Lengsfeld, P., Sieber, I., Phys. Rev. B 61, 15558 (2000).10.1103/PhysRevB.61.15558
15. Donnelly, D. W., Covington, B. C., Appl. Phys. Lett. 78, 2000 (2001).10.1063/1.1359784
16. Secco d'Aragona, F., J. Electrochem. Soc. 119, 948 (1972).10.1149/1.2404374
17. Fogarassy, E., Fuchs, c., De Unamuno, S., siffert, P, Appl. Surf. Sci. 43, 316 (1989).10.1016/0169-4332(89)90232-8

Characteristics of Dopant Activation by Sequential Lateral Solidification (SLS)

  • Yong-Hae Kim (a1), Choong-Yong Sohn (a1), Choong-Heui Chung (a1), Young-Wook Ko (a1) and Jin Ho Lee (a1)...

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