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Characteristics of Dopant Activation by Sequential Lateral Solidification (SLS)

Published online by Cambridge University Press:  01 February 2011

Yong-Hae Kim
Affiliation:
Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305–350, Korea
Choong-Yong Sohn
Affiliation:
Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305–350, Korea
Choong-Heui Chung
Affiliation:
Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305–350, Korea
Young-Wook Ko
Affiliation:
Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305–350, Korea
Jin Ho Lee
Affiliation:
Basic Research Lab., Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305–350, Korea
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Abstract

The characteristics of dopant activation by sequential lateral solidification in poly-Si films is investigated using sheet resistance measurement and Raman measurement. Sheet resistance of n+ and p+ doped poly-Si films decreases exponentially as the laser energy increases. The minimum sheet resistance of n+ doped poly-Si films is 150 Ω/□ which is near to that of rapid thermal annealing (RTA) while the minimum sheet resistance of p+ doped poly-Si films is 180 Ω/□ which is less than a half to that of RTA. The sheet resistance of n+ and p+ doped poly-Si increases as the laser energy increases when the laser energy is above 573 mJ/cm2 at which the nucleation occurs. Raman signal of n+ doped poly-Si films shows single peak at 515 cm-1 with all laser energy and has maximum intensity at 566 mJ/cm2 laser energy. Raman signal of p+ doped poly-Si films shows single peak below 413 mJ/cm2 laser energy and double peak above 444 mJ/cm2 laser energy where the fully melting of p+ doped poly-Si film occurs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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