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Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions

Published online by Cambridge University Press:  18 July 2013

Syuhei Kurokawa ,
Toshiro Doi ,
Osamu Ohnishi ,
Tsutomu Yamazaki ,
Zhe Tan  and
Tao Yin
Syuhei Kurokawa
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Toshiro Doi
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Osamu Ohnishi
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, University of Miyazaki, 1-1, Gakuen Kibanadai-nishi, Miyazaki-shi, 889-2192, JAPAN
Tsutomu Yamazaki
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Zhe Tan
Affiliation:
Department of Mechanical Engineering, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
Tao Yin
Affiliation:
Department of Mechanical Engineering, Graduate School of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, JAPAN
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Abstract

Semiconductor technology is the key point of the information society. However, as technology developing, the traditional semiconductor material such as silicon (Si) could not meet the demand of the society. Therefore, the next generation semiconductor material silicon carbide (SiC) is widely concerned. Compared to Si, SiC has some superior physical and chemical properties. On the other hand, it is difficult to polish SiC wafers due to the chemical, mechanical, and thermal stability. To achieve high-efficient CMP processing of SiC substrates, oxygen gas was introduced which might increase removal rates. MnO2 slurry was selected instead of silica slurry and strong oxidant KMnO4 was used to improve SiC-CMP process as an additive. In this paper, the effect of oxidant was inspected first. Meanwhile, we carried out the CMP experiment with the new type CMP machine to control the processing atmospheres including types of gases and gas pressures. As conclusions, oxygen and high atmospheric pressure can increase the removal rate in MnO2 slurry. KMnO4 additive has a great effect on increase of the removal rate. One of additional interesting results is that there seems to be the optimum mixture ratio of N2 and O2 gases to achieve a higher removal rate of SiC wafer.

Keywords

CMPchemical reactionsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1560: Symposium BB – Evolutions in Planarization—Equipment, Materials, Techniques and Applications , 2013 , mrss13-1560-bb03-01
Copyright
Copyright © Materials Research Society 2013 

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References

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