Skip to main content Accessibility help

Characteristics Analysis of Saw Filter Using Al0.36Ga0.64N Thin Film

  • Sun-Ki Kim (a1), Min-Jung Park (a1), Cheol-Yeong Jang (a1), Hyun-Chul Choi (a1), Jung-Hee Lee (a1) and Yong-Hyun Lee (a1)...


AlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between –30 °C and 60 °C Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.



Hide All
1. Okano, H. Tanaka, N. Takahashi, Y. Tamaka, T. Shibata, K. and Nakano, S. Appl. Phys. Lett. 64, 166168 (1994).
2. AsifKhan, M. Hu, X. Sumin, G. Yang, J. Gaska, R. and Shur, M. S. IEEE Electron Device Letters, Vol. 21, No. 2, 6365 (2000).
3. Clock, G. D. O and Morkoc, M. T. Appl. Phys. Lett., vol. 23, No. 2, 5556 (1973).
4. Deger, C. Born, E. Angerer, H. Ambacher, O. Stutzmann, M. Hornsteiner, J. Riha, E. and Fischerauer, G. Appl. Phys. Lett., Vol. 72, No. 19, 24002402 (1998).
5. Campell, C. K. Surface Acoustic Wave Devices for Mobile and Wireless Communications. New York: Academic, (1998).
6. Choi, K. H. Kim, Jin Yong, Kim, Hyeong Joon, Yang, Hyung Kook, and Park, Jong Chul, IEEE Ultrasonics Symp., 353356 (2000).
7. Brunner, D. Angerer, H. Bustarret, E. Freudenberg, f. Hopler, R. Dimitrov, R. Ambacher, O. and Stutzmann, M. J. Appl. Phys. 82(10), 15, November (1997).
8. Didenko, I. S. Hickernell, F. S. and Naumenko, N. F. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 47, 179 (2000)
9. Tonami, S. Nishikata, A. and Shimizu, Y. Jpn. J. Appl., pt. 1, vol. 34, 26642667, May (1995).
10.T. Sato and Abe, H. IEEE Trans. Ultrason. Ferroelectr. Freq. Contr., vol. 45, Jan (1998).
11. Gualtieri, J. G. Kosinski, J. A. IEEE Trans. Ultrason. Ferroelectr. Freq. Contr., vol. 41, Jan (1994).
12. Lee, Suk-Hun, Jeong, Hwan-Hee, Bae, Sung-Bum, Choi, Hyun-Chul, Lee, Jung-Hee, and Lee, Yong-Hyun, IEEE Trans. Electron Devices, Vol. 48, 524529 (2001).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed