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Characteristic Temperature Estimation for GaN-Based Lasers

  • T. Honda (a1), H. Kawanishi (a1), T. Sakaguchi (a1), F. Koyama (a2) and K. Iga (a2)...

Abstract

We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.

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