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Characteristic Temperature Estimation for GaN-Based Lasers
Published online by Cambridge University Press: 15 February 2011
Abstract
We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.
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- Copyright © Materials Research Society 1999
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