No CrossRef data available.
Article contents
Characterisation Of Quantum Wells By Auger Analysis On Chemical Bevels
Published online by Cambridge University Press: 28 February 2011
Abstract
In recent papers, we have described a depth profiling method using chemical beveling and Auger line scan measurement, quick and easy to perform, with a sufficient resolution to check the abruptness of chemical interfaces obtained in epitaxial growth of III-V compounds.
The variation law of chemical species concentrations at the interfaces is tighly related to the mecanisms of initial growth. We present here a theoretical analysis applied to chemically beveled interfaces with sharply graded concentrations.
We show on two examples of LP-MOCVD quantum wells (InP/GaInAs/InP and GaInP/GaAs/GaInP) the good agreement between experimental and theoretical curves, assuming exponentially varying concentrations. Finally, we discuss the correlations with the dynamics of the first steps of the LP-MOCVD growth.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1987