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Characterisation of Epitaxial MBE and MOCVD GaAs DOPED with Donors or Acceptors Using FTIR Spectroscopy

  • R. Murray (a1), R. C. Newman (a1), P. S. Nandhra (a1), R. B. Beall (a2), J. J. Harris (a2) and P. J. Wright (a3)...

Abstract

Epitaxial layers of GaAs grown by MBE or MOCVD and doped with silicon impurities have been studied using FTIR spectroscopy. Vibrational modes are observed for Si(Ga), Si(As), Si(Ga)-Si(As) and a defect labelled SI-X. This latter defect appears to be responsible for the compensation effects found in some highly doped material. The Si(Ga) mode is modified in AlGaAs but understood in terms of a simple statistical model. Epitaxial GaAs layers doped with silicon or beryllium are passivated by exposing the samples to an RF hydrogen plasma which leads to the formation of Si-H and Be-H close pairs.

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Characterisation of Epitaxial MBE and MOCVD GaAs DOPED with Donors or Acceptors Using FTIR Spectroscopy

  • R. Murray (a1), R. C. Newman (a1), P. S. Nandhra (a1), R. B. Beall (a2), J. J. Harris (a2) and P. J. Wright (a3)...

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