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Characterisaticn of Defects in Silicon by Transmission Electron Microscopy after CMOS and Bipolar Processing
Published online by Cambridge University Press: 28 February 2011
Abstract
Transmission electron microscopy at 300kV has been used in a thorough examination of CMO3 and bipolar processed wafers of Czochralski silicon. Diffraction contrast and tilting experiments have been performed on the defects which were observed and a number of new observations have been made on stacking faults and {001} platelets induced by oxygen precipitation.
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- Research Article
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- Copyright © Materials Research Society 1989