Skip to main content Accessibility help
×
Home

A Channeling Study of Defect-Boron Complexes in Si

  • M.L. Swanson (a1), L.M. Howe (a1), F.W. Saris (a1) and A.F. Quenneville (a1)

Abstract

Si crystals were doped with 0.1–0.2 at% 11B in the near surface region by ion implantation followed by thermal diffusion at 1373 K or by ruby laser annealing. The position of the B atoms in the Si lattice was determined by channeling measurements, utilizing both the yield of H+ ions (of incident energy 0.7 MeV) backscattered from Si atoms and the yield of alpha particles from the 11B(p,α)8Be nuclear reaction. Initially, 95–99% of the B atoms were substitutional. Irradiation at 35 K or 293 K with 0.7 MeV H+ displaced B atoms from lattice sites. The displacement rate was greater at 293 K than at 35 K, and was greater for diffused samples than for laser annealed samples. Following 35 K irradiations, a large increase in the fraction fdB of displaced B atoms occurred during annealing near 240 K. At higher annealing temperatures, fdB decreased over a broad temperature range from 425–825 K. Angular scans through <110> channels for the laser annealed samples after 293 K irradiation or after 35 K irradiation plus 293 K annealing showed a pronounced narrowing of the dip in 11B(p,α)8Be yields compared with the dip in yields from Si, whereas no narrowing was observed for <100> channels. These results indicate that B atoms were displaced into specific lattice sites by the migration of an interstitial B defect (the EPR G28 defect) near 240 K.

Copyright

References

Hide All
1. Stein, H.J. and Vook, F.L., Rad. Eff. 1, 41 (1969).
2. Bean, A.R., Morrison, S.R., Newman, R.C. and Smith, R.S., J. Phys. C 5, 379 (1972).
3. Watkins, G.D., in Proc. Int. Conf. on Lattice Defects in Semiconductors, Freiburg, 1974 (Institute of Physics, London 1975), p.1.
4. Watkins, G.D., in Radiation Damage in Semiconductors, Baruch, P. ed. (Dunod, Paris, 1965) p. 97.
5. Watkins, G.D., in Radiation Effects in Semiconductors, Vook, F.L. ed. (Plenum Press, New York, 1968) p.67.
6. Watkins, G.D., Phys. Rev. B 12, 5824 (1975).
7. Watkins, G.D., Phys. Rev. B 13, 2511 (1976).
8. Elkin, E.L. and Watkins, G.D., Phys. Rev. 174, 881 (1968).
9. Watkins, G.D. and Corbett, J.W., Phys. Rev. 134A, 1359 (1964).
10. Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961).
11. Brower, K.L., Phys. Rev. B 1, 1908 (1970).
12. Davies, J.A., in Channeling in Solids, Morgan, D.V. ed. (J. Wiley and Sons, New York, 1973), Ch.ll.
13. Picraux, S.T., in New Uses of Ion Accelerators, Ziegler, J.F. ed. (Plenum Press, New York, 1975) p. 229.
14. Gemmell, D.S., Rev. Mod. Phys. 46, 129 (1974).
15. Haskell, J., Rimini, E. and Mayer, J.W, J. Appl. Phys. 43, 3425 (1972).
16. Kool, W.H., Roosendaal, H.E., Wiggers, L.W. and Saris, F.W., Nucl. Instr. Meth. 132, 285 (1976).
17. Swanson, M.L., Davies, J.A., Quenneville, A.F., Saris, F.W. and Wiggers, L.W., Rad. Eff. 35, 51 (1978).
18. Wiggers, L.W. and Saris, F.W., Rad. Eff. 41, 149 (1979).
19. Wiggers, L.W. and Saris, F.W., Proc. Int. Conf. IBMM, Budapest 1978, Gyulai, J. et al. eds. p. 583.
20. Swanson, M.L., Howe, L.M., Quenneville, A.F. and Saris, F.W., Rad. Eff. Lett. 50, 139 (1980).
21. Picraux, S.T., Brown, W.L. and Gibson, W.M., Phys. Rev. B 6, 1382 (1972).
22. Domeij, B., Fladda, G. and Johansson, N.G.E., Rad. Eff. 6, 155 (1970).
23. Andersen, J.U., Andreasen, O., Davies, J.A. and Uggerhøj, E., Rad. Eff. 7, 25 (1971).
24. Hofker, W.K., Thesis, University of Amsterdam (1975).
25. Young, R.T. et al. , Appl. Phys. Lett. 32, 139 (1978).
26. Bøttiger, J., Davies, J.A., Lori, J. and Whitton, J.L., Nucl. Instr. Meth. 109, 579 (1973).
27. Beckman, O., Huus, T. and Zupancic, C., Phys. Rev. 91, 606 (1953).
28. Swanson, M.L., Howe, L.M. and Quenneville, A.F., Phys. Stat. Sol. (a), 31, 675 (1975).
29. Swanson, M.L., Offermann, P. and Ecker, K.H., Can. J. Phys. 57, 457 (1979).
30. Fladda, G., Björkqvist, K., Eriksson, L. and Sigurd, D., Appl. Phys. Lett. 16, 313 (1970).
31. North, J.C. and Gibson, W.M., Appl. Phys. Lett. 16, 126 (1970).
32. Watkins, G.D. and Troxell, J.R., Phys. Rev. Lett. 44, 593 (1980).
33. Watkins, G.D. and Corbett, J.W., Phys. Rev. 138, 543, 555 (1965).
34. Troxell, J.R. and Watkins, G.D., Phys. Rev. B 22, 921 (1980).

A Channeling Study of Defect-Boron Complexes in Si

  • M.L. Swanson (a1), L.M. Howe (a1), F.W. Saris (a1) and A.F. Quenneville (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed