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Channeling Phenomena of Direct Si-Implantation to Liquid-Glass Encapsulation Czochralski GaAs Crystal Wafers Through Observation of Threshold Voltages

  • Yasuyuki Saito (a1) and Katsuyoshi Fukuda (a2)

Abstract

Threshold voltages of Si-implanted gallium arsenide (GaAs) MESFETs depend on not only wafer crystallographic characteristics, but also MESFET fabrication processes. When the position of the orientation flat was changed to improve mechanical shock tolerance, it was found that Vth varied on the wafers due to a crystallographic orientation effect on the Si implantation. Thus, we investigated Vth distributions on wafers of several different Si implantation orientations. It was confirmed that Vth largely varies according to Si-implantation orientations.

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24 Ishimura, H., Izumi, H., and Onose, H., their work on the implantation apparatus.
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Channeling Phenomena of Direct Si-Implantation to Liquid-Glass Encapsulation Czochralski GaAs Crystal Wafers Through Observation of Threshold Voltages

  • Yasuyuki Saito (a1) and Katsuyoshi Fukuda (a2)

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