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Channel Strain Characterization in Semiconductor Device by Techniques Based on Transmission Electron Microscope

  • Jinghong Li (a1), Jeff Johnson (a1), Dureseti Chidambarrao (a1), Yunyu Wang (a1) and Anthony G. Domenicucci (a1)...

Abstract

Three techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffraction (CBED), nano beam diffraction (NBD) and dark-filed holography (DFH). Consistent channel strain measurements from the three techniques on the same TEM sample (eSiGe PMOS with 17%Ge) were obtained. Reliable strain/stress measurement results in the channel area have been achieved with very good agreement with computer-aided design (TCAD) calculations.

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Channel Strain Characterization in Semiconductor Device by Techniques Based on Transmission Electron Microscope

  • Jinghong Li (a1), Jeff Johnson (a1), Dureseti Chidambarrao (a1), Yunyu Wang (a1) and Anthony G. Domenicucci (a1)...

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