Skip to main content Accessibility help

Channel Profile Engineering of MOSFETs using Delta Doping

  • Andrew C. G. Wood (a1) and Anthony G. O'Neill (a1)


The influence of the location, dose and width of the doping spike in a delta doped MOSFET is investigated theoretically. Calculations are performed for a range of n and p type 5M0SFETS, and the importance of each design parameter of the device is assessed. The optimum device has a delta layer around 2 0nm deep, with a sheet doping density around 1012cm−2 for the pMOSFET and 5.1011cm−2 for the nMOSFET. The effect of diffusion of the dopant during processing on the device performance is also considered, and it is found that this causes a shift in the threshold voltage of the device. The layer width should ideally be kept below 5nm.



Hide All
1. Van Gorkum, A. A., Nakagawa, K. and Shiraki, Y., Jap. J. Appl. Phys. 26, L1933 (1987).
2. Zeindl, H. P., Wegehaupt, T., Eisele, I., Oppolzer, H., Reisinger, H., Temple, G. and Koch, F., Appl. Phys. Lett. 50, 1164 (1987).
3. Mattey, N. L., Hopkinson, M., Houghton, R. F., Dowsett, M. G., McPhail, D. S., Whall, D. S., Parker, E. H. C., Booker, G. R. and Whitehurst, J., Thin Solid Films 184, 15 (1990);
Mattey, N. L., Dowsett, M. G., Parker, E. H. C., Whall, T. E., Taylor, S. and Zhang, J. F., Appl. Phys. Lett. 57, 1648 (1990).
4. Zrenner, A., Reisinger, H., Koch, F. and Ploog, K., Proc. 17th Int. Conf. Phys. Semiconductors, San Fransisco, 1984, p325.
5. Schubert, E. F. and Ploog, K., Jap. J. Appl. Phys. 24. L608 (1985).
6. Malik, R. J., Aucoin, T. R., Ross, R. L., Board, K., Wood, C. E. C. and Eastman, L. F., Electron. Lett. 16, 836 (1980).
7. Schubert, E. F., Fischer, A. and Ploog, K., IEEE Trans. Electron Devices, ED33, 625 (1986).
8. Yamaguchi, K. and Shiraki, Y., IEEE Trans. Electron Devices, ED35, 1909 (1988).
9. Nakagawa, K., Van Gorkum, A. A. and Shiraki, Y., Appl. Phys. Lett. 51, 1869 (1989).
10. Board, K., Chandra, A., Wood, C. E. C., Judaprawira, S. and Eastman, L. F., IEEE Trans. Electron Devices, ED28 505 (1981).
11. Yamaguchi, K., Shiraki, Y., Katayama, Y. and Murayama, Y., Jap. J. Appl. Phys. 22–1, 267 (1983).
12. HFIELDS device model, University of Bologna, Italy.
13. Tam, S., ko, P -K and Hu, C., IEEE Trans. Electron Devices ED31, 1116 (1984).
14. Mattey, N. L. et al, to be published.


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed