Skip to main content Accessibility help

Cause of the Decrease in Electromigration Resistance in Am/Al3Ti Lines

  • A. Kameyama (a1), K. Masuzaki (a1), H. Okabayashi (a2), T. Sakata (a3) and H. Mori (a3)...


To investigate the cause of the lower electromigration (EM) resistance in Al/Al3Ti lines compared to that in Al/TiN lines, we studied the Al microstructure and the EM characteristics. Even after fine-grained Al3Ti formation through a reaction of the Al and Ti, the Al microstructure of the unreacted Al on the AI3Ti remained a bamboo grain structure with a high 111 orientation. Thus, the Al grain structure and texture did not affect the EM resistance. The critical current density for voiding was 0.64 MA/cm2. The Al drift velocity in the Al/Al3Ti bamboo lines was two orders of magnitude higher than that for Al/TiN bamboo lines from 180°C to 280°C. This higher Al drift velocity decreased the EM resistance in the lines. The activation energy of Al drift in the AI/AI3Ti lines was 0.6 to 0.7 eV, which is lower than that for Al lattice diffusion. Thus, the Al lattice is not the dominant transport path in Al/Al3Ti lines. The dependence of the Al drift velocity on the line size showed that the Al/Al3Ti interface was the dominant path in the Al/Al3Ti bamboo lines. Thus, we concluded that the rapid Al transport through the Al/Al3Ti interface decreases EM resistance in Al/Al3Ti lines.



Hide All
[1] Hosaka, M. et al., Proc. of 35th Int. Reliability Physics Symposium, p.329(1998).
[2] Ghate, P. B. et al., Thin Solid Films, 53, 117(1978).
[3] Tardy, J. and Tu, K. N., Phys. Rev., B32, 2070(1985).
[4] Blech, I. A. and Kinsbron, E., Thin Solid Films, 25, 327(1975).
[5] Okabayashi, H. et al., Jpn. J. Appl. Phys., 35, 1102(1996).
[6] Okabayashi, H. et al., Appl. Phys. Lett., 68, 1066(1996).
[7] Grosjean, D. E. et al., Proc. of 4th Int. Workshop on Stress Induced Phenomena in Metallization, p.182(1998).
[8] Howard, J. K. et al., J. Appl. Phys., 49, 4083(1978).
[9] C. -Hu, K. et al., J. Appl. Phys., 74, 969(1993).
[10] Grosjean, D. E. and Okabayashi, H., IEEE Trans. Electron Devices, 44, 744(1997).
[11] Oates, A. S., J. Appl. Phys., 70, 5369(1991).
[12] Blech, I. A., J. Appl. Phys., 47, 1203(1976).
[13] Fillippi, R. G., et al., J. Appl. Phys., 78, 3756(1995).
[14] C. -Hu, K. et al., IBM J. Res. Develop., 39, 465(1995).
[15] Oates, A. S., J. Appl. Phys., 79, 163(1996).
[16] Penny, R. V., J. Phys. Chem. Solids, 25, 335(1964).
[17] Heumann, H. and Meiners, H., Z. Phys., 57, 571(1996).
[18] English, A. T. and Kinsbron, E., J. Appl. Phys., 54, 268(1983).
[19] Hu, C. - K., Thin Solid Films, 260, 124(1995).
[20] For example, Ho, P. S. and Knok, T., Rep. Progr. Phys., 52, 301(1989).

Cause of the Decrease in Electromigration Resistance in Am/Al3Ti Lines

  • A. Kameyama (a1), K. Masuzaki (a1), H. Okabayashi (a2), T. Sakata (a3) and H. Mori (a3)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed