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Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

Published online by Cambridge University Press:  01 February 2011

Muhammad Maqbool ,
H. H. Richardson  and
M. E. Kordesch
Muhammad Maqbool
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
H. H. Richardson
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
M. E. Kordesch
Affiliation:
Department of Physics & Astronomy, and Condensed Matter and Surface Sciences Program, Ohio University, Athens, OH 45701, USA.
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Abstract

Praseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.12
Copyright
Copyright © Materials Research Society 2005

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References

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