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Cathodoluminescence and Micro-Structure of Polycrystalline GaN Grown on ZnO/Si

Published online by Cambridge University Press:  17 March 2011

Tsutomu Araki ,
Hidetaka Kagatsume ,
Hiroaki Aono  and
Yasushi Nanishi
Tsutomu Araki
Affiliation:
Dept. of Photonics, Ritsumeikan University1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Hidetaka Kagatsume
Affiliation:
Dept. of Photonics, Ritsumeikan University1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
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Abstract

We have investigated relationships between microscopic structure and cathodoluminescence (CL) property of polycrystalline (poly-) GaN grown by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) on ZnO/Si substrates. Very strong CL with a peak of 3.45 eV was observed from the poly-GaN, which mainly showed a columnar structure with a size of 50-100 nm. On the other hand, the intensity of CL from the poly-GaN with few columnar domains was weaker than that of the poly-GaN with the columnar structure. The CL image from the poly-GaN, in which the columnar domains were locally observed, showed a strong contrast between bright domains and a dark background. It is confirmed that these bright regions in the CL images are corresponding to the columnar domains of the poly-GaN, by comparing with the SEM images. These results suggest that the columnar domains are responsible for the strong CL from the poly-GaN grown on the ZnO/Si substrates. Cross-sectional transmission electron microscope (TEM) observation revealed that the columnar domains had high quality crystallinity with few defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.20
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A., Jpn. J. Appl. Phys., 36, L899(1997).Google Scholar
2. Zheleva, T. S., Ashmawi, W. M. and Jones, K. A., Phys. Stat. Sol. (a), 176, 545(1999).Google Scholar
3. Iwaya, M., Takeuchi, T., Yamaguchi, S., Wetzel, C., Amano, H. and Akasaki, I.; Jpn. J. Appl. Phys., 37, 316(1998).Google Scholar
4. Nitta, S., Kariya, M., Kashima, T., Yamaguchi, S., Amano, H. and Akasaki, I., Abstr. 3rd Int. Symp. on Control of Semicond. Interfaces, Karuizawa, B305(1999).Google Scholar
5. Tanaka, S., Takeuchi, M. and Aoyagi, Y., Jpn. J. Appl. Phys., 39, L831(2000).Google Scholar
6. Iwata, K., Asahi, H., Asami, K., Kuroiwa, R. and Gonda, S., Jpn. J. Appl. Phys., 36, L661(1997).Google Scholar
7. Murata, N., Tochishita, H., Shimizu, Y., Araki, T. and Nanishi, Y., J. Jpn. Appl. Phys., 37, L1214(1998).Google Scholar
8. Bour, D. P., Nickel, N. M., Walle, C. G. Van de, Kneissl, M. S., Krusor, B. S., Mei, Ping, and Johnson, N. M., Appl. Phys. Lett., 76, 2182(2000).Google Scholar
9. Yamada, K., Asahi, H., Tampo, H., Imanishi, Y., Ohnishi, K. and Asami, K., Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1, 556(2000).Google Scholar
10. Tochishita, H., Murata, N., Yabe, A., Shimizu, Y., Nanishi, Y. and Kadota, M., Proceeding of 2nd International Symposium on Blue Laser and Light Emitting Diodes, 174(1998).Google Scholar
11. Kondo, N. and Nanishi, Y., Appl. Phys. Lett., 54, 2419(1989).Google Scholar