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Carrier transport and photogeneration in large area p-i-n Si/SiC heterojunctions

Published online by Cambridge University Press:  17 March 2011

P. Louro ,
Yu. Vygranenko ,
R. Schwarz ,
M. Fernandes ,
M. Vieira ,
J. Gloeckner  and
M. Schubert
P. Louro
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt
Yu. Vygranenko
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt
R. Schwarz
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt
M. Fernandes
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt
M. Vieira
Affiliation:
Electronics and Communications Dept., ISEL, R. Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal. Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt
J. Gloeckner
Affiliation:
Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
M. Schubert
Affiliation:
Institut fur Physikalische Elektronik, Universitat Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
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Abstract

Glass/ZnO:Al/p (SixC1−x:H)/i (Si:H)/n (SixC1−x:H)/Al (0<x<1) heterojunction cells were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from illuminated current- and capacitance- voltage characteristics and spectral response measurements, in dark and under different illumination conditions. For the heterojunction cells high series resistance around 106 ω and atypical J-V characteristics are observed leading to poor fill factors, also it was observed that the responsivity decreases with the increase of the light bias intensity. For the homojunction the behaviour is typical of a non optimised p-i-n cell and the responsivity varies only slightly with the light bias conditions. A numerical simulation gives insight into the transport mechanism suggesting that in the heterojunctions and in dark conditions the transport mechanism depends almost exclusively on field-aided drift while under illumination it is dependent mainly on the diffusion of free carriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A25.10
Copyright
Copyright © Materials Research Society 2001

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References

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