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Carrier Recombination in A-SI:H P-I-N Devices Studied by PL and EL Spectroscopies

Published online by Cambridge University Press:  15 February 2011

C. N. Yeh ,
D. X. Han ,
K. D. Wang  and
L. E. McNeil
C. N. Yeh
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599–3244, USA
D. X. Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599–3244, USA
K. D. Wang
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599–3244, USA
L. E. McNeil
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599–3244, USA
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Abstract

Both photoluminescence (PL) and electroluminescence (EL) energy spectra were studied in the temperature range of 80 to 300 K on a-Si:H p-i-n structures. The EL spectrum depends on several parameters such as the i-layer thickness and the sample structure with or without a buffer layer (b-layer), while the PL spectrum shows no difference when those parameters are varied. Comparing PL and EL in 0.5 μm p-i-n devices with and without a buffer layer, we found that (a) at 80 K, the main-band peak energy is 1.3 eV for PL and 1.2 eV for EL; (b) the PL spectral line shape does not change with the insertion of a buffer layer, but the EL spectra show more enhanced main-band luminescence with the buffer layer; (c) the temperature dependence of the PL intensity shows a slope of 26 K which is similar to that of a-Si:H films, but the EL efficiency shows a weaker temperature dependence that varies with the diode structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 281
Copyright
Copyright © Materials Research Society 1995

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References

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