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Carrier Recombination Dynamics of InGaN/GaN LEDs and Its Applications to the Optimization of uv Generation Efficiency

Published online by Cambridge University Press:  10 February 2011

J. P. Basrur ,
F. S. Choa ,
P-L. Liu ,
J. Sipior ,
G. Rao ,
G. M. Carter  and
Y. J. Chen
J. P. Basrur
Affiliation:
CSEE Department, University of Maryland Baltimore County, Baltimore, MD 21250
F. S. Choa
Affiliation:
CSEE Department, University of Maryland Baltimore County, Baltimore, MD 21250
P-L. Liu
Affiliation:
On Leave to Naval Research Laboratory, Washington DC 20375, from Department of Electrical and Computer Engineering, SUNY at Buffalo, Amherst, NY 14260
J. Sipior
Affiliation:
Department of Chemical and Biochemical Engineering, UMBC
G. Rao
Affiliation:
Department of Chemical and Biochemical Engineering, UMBC The Medical Biotechnology center of the Maryland Biotechnology Institute, University of Maryland at Baltimore, Baltimore, MD 20201
G. M. Carter
Affiliation:
CSEE Department, University of Maryland Baltimore County, Baltimore, MD 21250
Y. J. Chen
Affiliation:
CSEE Department, University of Maryland Baltimore County, Baltimore, MD 21250
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Abstract

To obtain small size high speed ultraviolet sources, we studied the UV generation process and efficiency of GaN Blue LEDs. The blue and UV emissions follow a 4-level recombination model. Depending on a given pump pulse amplitude the UV to blue generation ratio increases and saturates with the increasing of pump pulse duration. High efficiency, upto 450 μ W UV power at 380 nm, can be obtained from a 1.2 mW blue LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1185
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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