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Carrier dynamics in spatially ordered InAs quantum dots

Published online by Cambridge University Press:  01 February 2011

Jörg Siegert ,
Saulius Marcinkevièius ,
Andreas Gaarder ,
Rosa Leon ,
Sergio Chaparro ,
Shane R. Johnson ,
Carlos Navarro ,
Xu Jin  and
Yong-Hang Zhang
Jörg Siegert
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
Saulius Marcinkevièius
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
Andreas Gaarder
Affiliation:
Department of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
Rosa Leon
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109, USA
Sergio Chaparro
Affiliation:
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
Shane R. Johnson
Affiliation:
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
Carlos Navarro
Affiliation:
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
Xu Jin
Affiliation:
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
Yong-Hang Zhang
Affiliation:
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-6206, USA
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Abstract

Spatial ordering of InAs quantum dots was attained by using misfit dislocations generated in a metastable InGaAs layer by means of thermal annealing. Influence of quantum dot positional ordering and dot proximity to dislocation arrays on carrier dynamics was studied by timeresolved photoluminescence. Substantially narrower inhomogeneous broadening from the ordered quantum dots was observed. Excitation intensity dependence of the photoluminescence intensity and carrier lifetime indicates stronger influence of nonradiative recombination for the ordered quantum dot structures. Numerical simulations allow estimating electron and hole capture rates from the quantum dots to traps located either at the quantum dot interfaces or in the vicinity of the quantum dots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F7.8
Copyright
Copyright © Materials Research Society 2002

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