Skip to main content Accessibility help
×
Home

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

  • G. A. J. Amaratunga (a1), W. I. Milne (a1), A. Putnis (a1), K. K. Chan (a1), K. J. Clay (a1) and M. E. Welland (a1)...

Abstract

Thin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

Copyright

References

Hide All
1. Bazhenov, V.K., Vikulin, F.M. and Gontar, A.G., Sov.Phys.Semicond. 19, 829, 1985
2. Shenai, K. and Baliga, B.J., Trans. IEEE,ED–36 1811, 1989.
3. Glover, G.H., Sol.St.Electron., 16,973, 1973.
4. Prins, J.F., App.Phys.Letts., 41, 950, 1982.
5. Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A. and Lindley, W.T., IEEE-EDL,8, 341, 1987.
6. Gildenblat, G.Sh., Grot, S.A., Wronski, C.R., Badzian, A.R., Badzian, T. and Messier, R., App.Phys.Letts., 53 586, 1988.
7. Amaratunga, G.A.J., Chan, K.K., Clay, K.J., Milne, W.I. and Putnis, A., Extnd. Abstracts, Diamond Technolgy Update Symp., MRS spring meeting 1989.
8. Amaratunga, G.A.J., Putnis, A., Clay, K.J. and Milne, W.I., App.Phys.Letts.,55, 634, 1989.
9. Caphart, T.W., Perry, T.A., Beetz, C.B., Belton, D.N., Fisher, G.B., Beall, C.E., Yates, B.N. and Taylor, J.W., App.Phys.Letts.,55, 957, 1989.
10. Namba, Y., Wei, J., Mhori, T. and Heidarpour, E., J.Vac.Sci and Tech.,A7.36, 1989.
11. Lifshitz, Y., Kasi, S.R. and Rabalais, J.W., Phys.Rev.Lett.,62, 1290, 1989.
12. Beiton, D.N., Harris, S.J., Schmieg, S.J., Weiner, A.M. and Perry, T.A., App.Phys.Letts.,54, 1989.
13. Amaratunga, G.A.J., Milne, W.I. and Putnis, A., IEEE-EDL, to appear in 11, Jan. 1990.

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

  • G. A. J. Amaratunga (a1), W. I. Milne (a1), A. Putnis (a1), K. K. Chan (a1), K. J. Clay (a1) and M. E. Welland (a1)...

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed