Skip to main content Accessibility help
×
Home

Carbon and the Kinetics of Oxygen Precipitation in Silicon

  • R.F. Pinizzotto (a1) and S. Marks (a1)

Abstract

Oxygen precipitation in Czochralski silicon has been studied as a function of anneal time, oxygen concentration and carbon concentration using FTIR. It was found that the oxygen supersaturation controls the precipitation kinetics in high oxygen content samples, whereas the carbon concentration is of prime importance in low oxygen content samples. The decrease in sustitutional carbon concentration after nucleation and its subsequent increase with extended growth anneals supports the view that carbon affects precipitate nucleation, but not precipitate growth. The measured oxygen solubility at 1000°C was found to depend on both the initial oxygen concentration and the initial carbon concentration.

Copyright

References

Hide All
1. Hu, S.M., and Patrick, W.J., J. Appl. Phys., 46, 1869 (1975).
2. Hu, S.M., Appl. Phys. letts., 31, 53 (1977).
3. Craven, R.A., Semiconductor Silicon/1981, edited by Huff, H.R., Kriegler, J., and Takeishi, Y., The Electrochemical Society, Vol. 81–5, 1981, page 254.
4. Kishino, S., Matsushita, Y., Kanomori, M., and Iizuka, T., Jap. J. Appl. Phys., 21, 1 (1982).
5. Gzsele, U., and Tan, T.Y., Appl. Phys. A, 28, 79 (1982).
6. Defects in Semiconductors, Proc. Mater. Res. Soc., Vol. 2, North-Holland, 1981.
7. Semiconductor Silicon/1981, The Electrochemical Society, Vol. 81–5, 1981.
8. Leroueille, J., phys. stat. sol. (a), 67, 177 (1981).
9. Oehrlein, G.S., Challou, D.J., Jaworowski, A.E., and Corbett, J. W., Phys. Letts., 86A, 117 (1981).
10. Oehrlein, G.S., Lindstrom, J.L., and Corbett, J.W., Appl. Phys. Letts., 40, 241 (1982).
11. Chsawa, A., Takizawa, R., Honda, K., Shibatomi, A., and Ohkawa, S., J. Appl. Phys., 53, 5733 (1982).
12. Kolbesen, B.O., and Muhlbauer, A., Sol. St. Elec., 25, 759 (1982).
13. Currie, L.C., Anal. Chem., 40, 586 (1968).
14. Kaiser, W., and Keck, P.H., J. Appl. Phys., 28, 882 (1957).
15. Newnan, R.C., and Willis, J.B., J. Phys. Chem. Sol., 26, 373 (1965).
16. Weidersich, H., and Katz, J.L., Correleation of Neutron and Charged Particle Damage, National Technical Information Service, Springfield, VA, 1976, page 21.
17 Murr, L.E., Interfacial Phenomena in Metals and Alloys, Addison-Wesley, Reading, MA, 1975.

Carbon and the Kinetics of Oxygen Precipitation in Silicon

  • R.F. Pinizzotto (a1) and S. Marks (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed