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Capacitance-Voltage Characteristics of Metallic Gate/Oxide/a-Si:H Mos Structures
Published online by Cambridge University Press: 28 February 2011
Abstract
The density of states (DOS) has for the first time been calculated throughout the entire bandgap region of undoped amorphous silicon from quasi-static capacitance-voltage (QSCV) measurements using MOS structures. The QSCV DOS is compared with the DOS obtained by the field-effect method. It is shown, that the coexistence of states of a different nature at the same bandgap level can be revealed by the temperature dependence of low frequency MOS CV measurements.
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