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Capacitance Spectroscopy of Schottky Diodes Formed on Ion-Etched GaAs

  • S. Sen (a1), E. D. Cole (a1) and L. C. Burton (a1)

Abstract

DLTS and low frequency capacitance measurements were made on Schottky diodes formed on Ion-beam etched (IBE) GaAs surfaces. Ion bombardment causes strong low frequency capacitance dispersion, increasing with ion energy. This is attributed to a thin, heavily damaged region, with a trap density in excess of 1017 per cm3. Such dispersion disappears under weak reverse bias and at reduced temperatures. These and other measurements are consistent with a lumped R-C model having components representing the top damaged layer, the underlying space-charge region, and shunt resistance to the ohmic contact.

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References

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1. Roberts, G. I. and Crowell, C. R., Sol. St. Elec. 16, 29 (1973).
2. Morante, J. R. et al., Sol. St. Elec. 26 537 (1983).
3. Chekir, F. and Barret, C., Appl. Phys. Lett. 45, 1212 (1984).
4. Hattori, K., Ohtani, T. and Fugii, T., J. Appl. Phys. 59, 2507 (1986).
5. Feng, G. F. et al., 1987 Spring Meeting of Materials Research Soc., Anaheim, April 1987. (MRS Proceedings, at press)
6. Schibli, E. and Milnes, A. G., Sol. St. Elec. 11 323 (1968).

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