Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-16T17:01:05.893Z Has data issue: false hasContentIssue false

The Calculation of Transmission Coefficients at Heterogeneous Semiconductor Interfaces: A Case Study Based on the n-InP | poly(pyrrole) Interface

Published online by Cambridge University Press:  21 March 2011

Carrie Daniels-Hafer
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Meehae Jang
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Frank E. Jones
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Shannon W. Boettcher
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Rob Danner
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Mark C. Lonergan
Affiliation:
Dept. of Chemistry and The Materials Science Institute, University of Oregon, Eugene, OR 97403-1253
Get access

Abstract

The n-InP | poly(pyrrole) interface is used as a case study to discuss the calculation of the transmission coefficient, describing the probability of majority carrier transfer, at a non-ideal semiconductor interface exhibiting anomalous behavior assumed to be due to a spatial distribution of barrier heights. The most notable anomaly is a weaker dependence of current on voltage than predicted by thermionic emission (i.e. quality or ideality factor greater than unity). Central to this discussion is the calculation of the equilibrium exchange current density Jo and barrier height Φb in light of a heterogeneous and potentially voltage-dependent barrier distribution. Various approaches to the measurement of Φb and Jovalid for semiconductor interfaces characterized by a uniform, voltage- and temperature-independent barrier are discussed when applied to a heterogeneous interface. In particular, the use of a capacitance-voltage measured barrier is demonstrated to result in an overestimation of κ whereas the use of a Richardson plot barrier is demonstrated to result in an underestimation. Depending on method, errors in excess of five orders-of-magnitude are observed for the n-InP | poly(pyrrole) interface under conditions where it exhibits only mildly anomalous behavior (ideality factor ≍ 1.2). The greatest confidence in the transmission coefficients occurs when the ideality factor is unity and the capacitance-voltage barrier agrees with the Richardson Plot barrier.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Lewis, N. S., Annu. Rev. Phys. Chem. 42, 543580 (1991).Google Scholar
2 Rhoderick, E. H. and Williams, R. H., Metal-Semiconductor Contacts, 2nd ed. (Oxford University Press, Oxford, 1988).Google Scholar
3 Tung, R. T., Phys. Rev. B 45, 13509 (1992).Google Scholar
4 Lewis, N. S., Z. Phys. Chem. 212, 161 (1999).Google Scholar
5 Lonergan, M. C. and Jones, F. E., J. Chem. Phys., accepted (2001).Google Scholar
6 Jones, F. E., Wood, B. P., Myers, J. A., and Daniels-Hafer, C., J. Appl. Phys. 56, 6431 (1999).Google Scholar
7 Freund, M. S., Karp, C., and Lewis, N. S., Current Separations 13, 6669 (1994).Google Scholar
8 Missous, M. and Rhoderick, E. H., J. Appl. Phys. 69, 7142 (1991).Google Scholar