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Buckling Evolution of Microelectromechanical Structures

Published online by Cambridge University Press:  10 February 2011

Xin Zhang ,
Tong-Yi Zhang  and
Yitshak Zohar
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Tong-Yi Zhang
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
Yitshak Zohar
Affiliation:
Department of Mechanical Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
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Abstract

This study reports in-situ observations of the buckling evolution of microelectromechanical structures during etching of their underneath sacrificial layers. As the etching went on, the buckling pattern evolved from mode I, the sinusoidal half-waves, to mode II, the constrained sinusoidal half-waves, to mode III, the conventional mode, and finally to mode IV, the blister- like local buckling. Closed formulae were derived from theoretical analysis, and the experimental results agreed well with the theoretical ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 518: Symposium N – Microelectromechanical Structures for Materials Research , 1998 , 155
Copyright
Copyright © Materials Research Society 1998

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References

[1] Fan, L. S., Tai, Y. C. and Muller, R. S., IEEE Trans. Electron Devices, ED-35, 724 (1988).Google Scholar
[2] Zhang, T.-Y., Zhang, X. and Zohar, Y., “Buckling of a polysilicon microbeam during etch of its underneath sacrificial layer”, Submitted to J. Micromechanics & Microengineering.Google Scholar
[3] Zhang, X., Zohar, Y. and Zhang, T.-Y., “Blister-like local buckling of polysilicon microbeams”, Submitted to the 1998 International Mechanical Engineering Congress and Exposition, Anaheim, California.Google Scholar