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Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Published online by Cambridge University Press:  01 February 2011

E. Ntsoenzok ,
H. Assaf  and
M.O. Ruault
E. Ntsoenzok
Affiliation:
CNRS-CERI, 3A, rue de la férollerie, 45071 Orléans, France
H. Assaf
Affiliation:
CNRS-CERI, 3A, rue de la férollerie, 45071 Orléans, France
M.O. Ruault
Affiliation:
CSNSM, CNRS-IN2P3, Batiment 108-F-91405 Orsay, France
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Abstract

In this pioneering study, we have extended noble-gas implant-induced cavity generation in Si and other semiconductors to a dielectric, viz., SiO2 by implanting a variety of inert gas species. It has been seen that helium and neon do not induce bubbles/cavities in SiO2, regardless of implantation parameters and nature of the sample. Krypton and xenon implantation however result in bubbles/cavities formation in the oxide layer. In the case of Xe a minimum threshold dose of about 1016 cm-2 is needed for their formation. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain even after a 1100°C anneal, while Xe strongly desorbs out at that temperature. C-V measurements reveal that the effective dielectric constant K is reduced from 3.9 SiO2 for bulk SiO2 to < 2.6, thus making this technique very attractive for low-k applications in Si technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E7.3
Copyright
Copyright © Materials Research Society 2005

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References

[1] Zhang, C.H., Chen, K.Q., Wang, Y.S., Sun, J.G., Shen, D.Y., Journal of Nuclear Materials 245, 210 (1997).Google Scholar
[2] Chernikov, V.N., Ullmaier, H., Zakharov, A.P., Journal of Nucl. Ma.t 258-263, 694 (1998).Google Scholar
[3]- Kaschny, J.R., Fichtener, P.F.P., Muecklich, A., Nucl. Instrum. Meth. B136-138, 583 (1998).Google Scholar
[4] Godey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M.F., Barbot, J.F., Leroy, B., J. Appl. Phys. 87, 2158 (1999).Google Scholar
[5] Bruel, M., Electronics Letters, 31, 1144 (1995).Google Scholar
[6] Kögler, R., Peeva, A., lebedev, A., Posselt, M., Skorupa, W., Oezelt, G., Hutter, H., Behar, M., J. Appl. Phys. 94, 3834 (2003).Google Scholar
[7] Semiconductor Industry Association, International Technology Roadmap for semiconductors, 2001 Edition, (http:// public.itrs.net/files/2001 ITRS/Home.htm).Google Scholar
[8] Ree, M., Chen, K.-J., Kirby, P., J. Appl. Phys. 72, 2014 (1992).Google Scholar
[9] Wang, Y.H., Moitreyee, M.R., Kumar, R., Wu, S.Y., Xie, J.L., Yew, P., Subramanian, B., Shen, L., Zeng, K.Y., Thin Solid Films 462–463, 211 (2004).Google Scholar
[10] Griffioen, C.C., Evans, J.H., Jong, P.C. de, Veen, A. Van, Nucl. Instrum. Meth. B27, 417 (1987).Google Scholar
[11] Schwickert, M., Lieb, K.P., Bolse, W., Gustafsson, M., Keinonen, J., Nucl. Instrum. Meth. B147, 238 (1999).Google Scholar
[12] Wulf, R., Calas, G., Ramos, A., Buttner, H., Roselieb, K., Rosenhauer, M., American Mineralogist, Vol 84, pp.1461–1463, (1999).Google Scholar
[13] Guillot, B., Guissani, Y., J. Chem. Phys. 105, 255 (1996).Google Scholar
[14] Boganov, A.G., Rudenko, V.S., Cheremisin, I.I., Soviet-Journal of Glass physics and Chemistry 10, 136 (1984).Google Scholar
[15] Jung, P., Nucl. Instr. and Meth. B91, 362 (1994).Google Scholar
[16] Hasegawa, M., Tabata, M., Fujinami, M., Ito, Y., Sunaga, H., Okada, S., Yamaguchi, S., Nucl. Instr. and Meth. B116, 347 (1996).Google Scholar
[17] Lifshitz, I.M., Slyosov, V.V., J. Phys. Chem. Solids 19, 35 (1961).Google Scholar
[18] Raineri, V., Saggio, M., Rimini, E., J.Mater. Res. 15, 1449 (2000).Google Scholar
[19] Grisolia, J., Claverie, A., Assayag, G. Ben, Godey, S., Ntsoenzok, E., Labhom, F., Veen, A. Van, J.Appl. Phys. 91, 9027 (2002).Google Scholar