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Broad and Focused Ion Beam Ga+ Implantation Damage in the Fabrication of p+-n Si Shallow Junctions

Published online by Cambridge University Press:  21 February 2011

A. J. Steckl ,
C-M. Lin ,
D. Patrizio ,
A. K. Rai  and
P. P. Pronko
A. J. Steckl
Affiliation:
University of Cincinnati, Cincinnati, OH 45221–0030 (author to whom correspondence should be addressed)
C-M. Lin
Affiliation:
Intel Corporation Santa Clara, CA 95052–8121
D. Patrizio
Affiliation:
Universal Energy Systems, Dayton, OH 45232
A. K. Rai
Affiliation:
Universal Energy Systems, Dayton, OH 45232
P. P. Pronko
Affiliation:
Universal Energy Systems, Dayton, OH 45232
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Abstract

The use of focused and broad beam Ga+ implantation for the fabrication of p+-n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900°C anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 161
Copyright
Copyright © Materials Research Society 1989

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References

[1] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Si p+-n Shallow Junction Fabrication Using On-Axis Ga+ Implantation,” Applied Physics Letters, Vol.52, pp. 2049–2051, June 1988.Google Scholar
[2] Lin, C.-M., Steckl, A.J. and Chow, T.P., “Electrical Properties of Ga-Implanted Si p+-n Shallow Junctions Fabricated by Low Temperature Rapid Thermal Annealing,” IEEE Electron Device Letters, Vol. EDL–9, pp. 594–597, November 1988.Google Scholar
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