Skip to main content Accessibility help
×
Home

Boron Doping Effects on the Electro-optical Properties of Zinc Oxide Thin Films Deposited by Low-Pressure Chemical Vapor Deposition Process

  • Jerome Steinhauser (a1), Sylvie Faÿ (a2), Romain Schlüchter (a3), Seung Yeop Myong (a4), Evelyne Vallat (a5) and Christophe Ballif (a6)...

Abstract

Boron-doped zinc oxide (ZnO) films deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) technique are used as Transparent Conductive Oxide (TCO) to contact thin-film silicon solar cells. In this paper, the effect of boron introduced as dopant during ZnO formation is studied. These films are highly transparent in the visible range, whereas in the near infrared region their transmittance decreases with the increase of boron content due to free carrier absorption (FCA). A shifting of the fondamental band gap is also observed. The resistivity decreases of about one order of magnitude with the increase of the doping ratio ([B2H6]/[DEZ]) from 0 to 2. This resistivity drop is mainly due to an increase of the free carrier concentration. In low doped samples, Hall mobility increases with grain size, whereas it shows no grain size dependence in highly doped layers. This suggest that the scattering by grain-boundary is the main limiting factor for transport in low doped ZnO samples, whereas in highly doped ZnO films transport is controlled by the ionized impurity scattering within the grains.

Copyright

References

Hide All
1. Shah, A., Meier, J., Bucechel, A., Kroll, U., Steinhauser, J., Meillaud, F., Schade, H., Dominé, D., Thin solid films 502, 292299 (2006)
2. Rech, B., Schöpe, G., Kluth, O., Repmann, T., Roschek, T., Müller, J., Hüpkes, J., Stiebig, H., Proc. of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, (2003)
3. Faÿ, S., Feitknecht, L., Schlüchter, R., Kroll, U., Vallat-Sauvain, E., Shah, A., Solar Energy Materials and Solar Cells (2004)
4. Kluth, O., Plesa, D., Kuhn, H., Popeller, M., Roschek, T., Springer, J., Stein, W., Buechel, A., Kroll, U., Huegli, A., Benali, S., J. Meier Proc. of the 20th EU-PVSEC, Spain (2004)
5. Meier, J. et al., Proc. of the 31th IEEE Photovoltaic Specialist Conference, Lake Buena Vista, FL, USA (2005)
6. Feitknecht, L., Faÿ, S., Schlüchter, R., Shah, A., Proc. of the 19th EU-Photovoltaic Solar Energy Conference pp. 15131515, Paris, France (2004)
7. Steinhauser, J., Feitknecht, L., Faÿ, S., Schlüchter, R., Shah, A., Ballif, C., Springer, J., Mullerova-Hodakova, L., Purkrt, A., Poruba, A., Vanecek, M., Proc. of the 20th EU Photovoltaic Solar Energy Conference, Barcelona, Spain, (2004)
8. Burnstein, E., Phys. Rev. 93, 632 (1954)
9. Moss, T.S., Proc. R. Phys. Soc. London Ser. B 67, 775 (1954)
10. Sernelius, B.E., Berggren, K.F., Jin, Z.C., Hamberg, I., Granqvist, C.G., Phys. Rev. B 37, 10244 (1988)
11. Roth, A.P., Webb, J.B., Williams, D.F., Phys. Rev. B 25, 7836 (1982)
12. Jin, Z.C., Hamberg, I., Granqvist, C.G., J. Appl. Phys. 64, 5117 (1988)
13. Sakai, K., Kakeno, T., Ikari, T., Shirakata, S., Sakemi, T., Awai, K., Yamamoto, T., J. Appl. Phys. 99, 043508 (2006)
14. Aghamalyan, N.R. et al. Semicond. Sci. Technol. 18, 525529 (2003)
15. Minami, T., MRS Bulletin, 38 (2000)
16. Ellmer, K., J. Phys. D: Appl. Phys. 34, 30973108 (2001)
17. Roth, A.P., Williams, D.F., J. Appl. Phys. 52, 6685 (1981)
18. Bohsle, V., Tiwari, A., Narayan, J., Appl. Phys. Letters, 88, 032106 (2006)

Keywords

Boron Doping Effects on the Electro-optical Properties of Zinc Oxide Thin Films Deposited by Low-Pressure Chemical Vapor Deposition Process

  • Jerome Steinhauser (a1), Sylvie Faÿ (a2), Romain Schlüchter (a3), Seung Yeop Myong (a4), Evelyne Vallat (a5) and Christophe Ballif (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed