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Bonded-H in Gate Dielectrics Deposited by Plasma Assisted Chemical Vapor Deposition and Subjected to Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky ,
H. Niimi  and
K. Koh
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
H. Niimi
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
K. Koh
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

The incorporation of bonded nitrogen into ultra thin SiO2 gate dielectrics has become an important technology issue. Nitrogen atoms bonded in the immediate vicinity of the Si-SiO2 interface improve device reliability in n-channel field effect transistors. N- atom incorporation at the monolayer concentration range has been achieved by remote plasma assisted oxidation in N2O at 300°C. The incorporation mechanism and the stability of bonded-N are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 429: Symposium N – Rapid Thermal and Integrated Processing V , 1996 , 233
Copyright
Copyright © Materials Research Society 1996

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References

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