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Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

D. V. Tsu  and
G. Lucovsky
D. V. Tsu
Affiliation:
Department of Physics, NC State Univ., Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Department of Physics, NC State Univ., Raleigh, NC 27695-8202
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Abstract

We have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 285
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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