Skip to main content Accessibility help

BN protective coating for high temperature applications

  • Ravi Bathe (a1), R.D. Vispute (a1), Daniel Habersat (a1), Ichiro Takeuchi (a1), R.P. Sharma (a1), T. Venkatesan (a1), T.S. Zheleva (a2) and Ken Jones (a2)...


We report on the fabrication, characterization, and processing of boron nitride films for use in high temperature applications such as field passivation, capping layers for thermal annealing of SiC, and protecting metallic filaments from their working environments. The BN films have been fabricated by pulsed laser deposition and spray techniques. The deposited films were characterized by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, Ultraviolet-Visible Spectroscopy, Rutherford Backscattering Spectrometry and Transmission Electron Microscopy. The BN films deposited in the temperature range of 200-500°C have been found to be poorly crystalline, whereas the films fabricated above 600°C have been found to be microcrystalline. The as-deposited films were annealed at various temperatures ranging from 900°C to 1700°C in order to densify the films and study the applicability of the coatings. An AlN buffer layer was also applied in a few cases to improve chemical bonding with the substrate. Adhesion of the films with the heater components was greatly improved for high temperature annealed samples due to good interfacial bonding with the substrate material. Our results on the properties of BN films with an emphasis on characterization, processing, and implications for high temperature applications are discussed.



Hide All
1. Bellman, R. and Raj, R.. Rev. Sci. Instrum. 67, 3958 (1996).
2. Jones, K.A., Shah, P.B., Kirchner, K.W., Lareau, R.T., Wood, M.C., Ervin, M.H., Vispute, R.D., Sharma, R.P., Venkatesan, T., and Holland, O.W., Mater. Sci. and Eng. B 61–62, 281 (1999).
3. Jones, K.A., Derenge, M.A., Kirchner, K.W., Ervin, M.H., Wood, M.C., Zheleva, T.S., Vispute, R.D., Sharma, R.P., and Venkatesan, T., J. Electron. Mat. 29, 262 (2000).
4. Vel, L., Demazeau, G., Etourneau, J., Mater. Sci. and Eng. B 10, 149 (1991).
5. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237 (1992).
6. Morkoc, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994); and references therein.
7. Pulsed Laser Deposition of Thin Films, edited Chrisey, D. B., and Hubler, G. K., (Wiley, New York, 1994).
8.Synthesis and Properties of Boron Nitride, edited by Pouch, J., and Alterovitz, S. A., Materials Science Forum, Vols. 45–55 (Trans Tech, Brook-field, VT) 1990.
9. Geick, R., Penny, C. H., and Rupprecht, G., Phy. Rev. 146, 543 (1996).
10. Chiang, C.I., Linker, G., and Meyer, O.. Mat. Chem. Phys. 48, 178 (1997).
11. Feldermann, H., Ronning, C., Hofsäss, H., Huang, Y. L. and Seibt, M., J. Appl. Phys. 90, 3248, (2001).
12. Feldermann, H., Merk, R., Hofsäss, H., Ronning, C., and Zheleva, T.. Appl. Phys. Lett. 74, 1552 (1999).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed