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Blue Light Electroluminescence From Doped μc-SiC prepared by Excimer (ArF) Laser Crystallisation

Published online by Cambridge University Press:  21 February 2011

S. P. Lau ,
J. M. Marshall ,
T. E. Dyer ,
A. R. Hepburn  and
J. F. DaVies
S. P. Lau
Affiliation:
Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, United Kingdom.
J. M. Marshall
Affiliation:
Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, United Kingdom.
T. E. Dyer
Affiliation:
Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, United Kingdom.
A. R. Hepburn
Affiliation:
Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, United Kingdom.
J. F. DaVies
Affiliation:
Department of Materials Engineering, University College of Swansea, Singleton Park, Swansea, SA2 8PP, United Kingdom.
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Abstract

A novel method has been developed to prepare highly conductive and wide band gap doped (B2H6/PH3) microcrystalline silicon carbide (μ-SiC) by excimer (ArF) laser crystallisation. Doped a-SiC:H films were prepared by Plasma Enhanced Chemical Vapour Deposition (PECVD), both with and without H2 dilution. After crystallisation, this material has Taue gap of around 2.0 eV and exhibits a dark conductivity as high as 20 (Ωcm)-1, more than ten orders of magnitude higher than before the laser irradiation. This is shown to be mainly due to the formation of SiC microcrystallites in the laser crystallised a-SiC:H.

In this paper, we report that this material can be utilised not only as the carrier injection layer in a-SiC:H based Thin Film Light Emitting Diodes (TFLEDs) but also as a luminescent layer. Blue light emission has been observed from a laser crystallised (LC) doped μc-SiC based electroluminescent device, the peak wavelength is around 490nm.

The simplicity of excimer (ArF) laser crystallisation and its capability to fabricate poly-Si TFTs, makes this a promising novel method to realise fully integrated Si large area multi-colour displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 647
Copyright
Copyright © Materials Research Society 1994

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References

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