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Bismuth Overlayer Formation on GaAs(110)

  • S.-L. Chang (a1), T. Guo (a1), W.K. Ford (a1), A. Bowler (a1) and E.S. Hood (a1)...

Abstract

The temperature and coverage dependent ordering of bismuth overlayers on GaAs(110) is examined using low energy electron diffraction (LEED). Sixth order electron diffraction profiles associated with overlayer ordering are observed at coverages of 0.7, 1.0, and 1.5 monolayers (ML) and for temperatures ranging from -110 C to 200 C. The full-width at half-maxima (FWHM) of the sixth-order spots are examined. Profile analysis reveals narrowing widths with increasing annealing temperature, indicating an improvement of the long-range ordering of the overlayers. Differences in inter- and intrachain ordering are observed, analyzed, and discussed.

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Bismuth Overlayer Formation on GaAs(110)

  • S.-L. Chang (a1), T. Guo (a1), W.K. Ford (a1), A. Bowler (a1) and E.S. Hood (a1)...

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