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Behavior Of The Potential N-Type Dopants P And As In Diamondafter Low Dose Ion Implantation

  • H. Hofsäss (a1), M. Dalmer (a1), M. Restle (a1), C. Ronning (a1), K. Bharuth-Ram (a2), H. Quintel (a1) and The Isolde-Collaboration (a3)...

Abstract

We have studied the lattice sites of P and As impurities in natural IIa diamond after room temperature ion implantation at very low doses of 1011 P/cm2 and ≤ 1013 As/cm2 and subsequent annealing. We implanted radioactive 33P and 73Se/73As probe atoms and used the sensitive emission channeling technique to determine the impurity lattice sites. In this technique the channeling effects of emitted decay electrons are measured for different crystal axes. By comparison with calculated electron emission distributions the fractions of emitter atoms on different lattice sites can be quantitatively determined. After annealing of the implanted samples above 900°C we find high substitutional fractions of 70 ± 10 % for 33P and 55 ± 5 % for 73As.

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Behavior Of The Potential N-Type Dopants P And As In Diamondafter Low Dose Ion Implantation

  • H. Hofsäss (a1), M. Dalmer (a1), M. Restle (a1), C. Ronning (a1), K. Bharuth-Ram (a2), H. Quintel (a1) and The Isolde-Collaboration (a3)...

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