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The Behavior of Steps on Vicinal Si(001) and Ge(001)

  • J. E. Griffith (a1), J. A. Kubby (a2), P. E. Wierenga (a3) and G. P. Kochanski (a1)

Abstract

Tunneling images of vicinal Si(001) and Ge(001) cut with a tilt about [110] are presented. Si(001) samples cut with a 4· tilt exhibit double steps with many kinks and point defects, while 2· Ge(001) samples exhibit only monoatomic steps. The behavior of the steps is essentially described by a model due to Chadi. The procedure used to clean the surface can have a strong influence on the spacing of the steps.

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The Behavior of Steps on Vicinal Si(001) and Ge(001)

  • J. E. Griffith (a1), J. A. Kubby (a2), P. E. Wierenga (a3) and G. P. Kochanski (a1)

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