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Behavior of Damage in Selectively Implanted SiGe/Si

Published online by Cambridge University Press:  21 February 2011

N. David Theodore ,
Gordon Tam ,
Jim Whitfield ,
Jim Christiansen  and
John Steele
N. David Theodore
Affiliation:
Motorola Inc., Advanced Custom Technologies, Mesa, AZ 85202
Gordon Tam
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
Jim Whitfield
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
Jim Christiansen
Affiliation:
Motorola Inc., Advanced Custom Technologies, Mesa, AZ 85202
John Steele
Affiliation:
Motorola Inc., Materials Research and Strategic Technologies, 2200 W. Broadway Rd., M360 Mesa, AZ 85202
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Abstract

Epitaxial SiGe/Si layers are being extensively investigated for use in base regions of high-speed heterojunction bipolar-transistors (HBTs). Extended defects can be formed in SiGe/Si layers by ion-implantation. Defects, once formed in the layers, can negatively impact electrical performance and also future reliability of the HBTs. The present study investigates the interaction between selective-implant damage and strained SiGe/Si layers of sub-critical thickness. Implant-damage is observed to form dislocation-sources at the edges of implanted regions in SiGe/Si heterolayers. The dislocation sources produce glide dislocation loops. Segments of these loops glide down to SiGe/Si interfaces causing misfit dislocations to arise at interfaces in the heterolayers. Misfitdislocations are formed in directions parallel to and perpendicular to the <110> edge of the implanted region. Dislocations propagate out to a distance of ∼100-150 nm past the edge of the implant in the case of Si0.9Ge0.1/Si layers of sub-critical thickness. The origin and behavior of these defects is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 159
Copyright
Copyright © Materials Research Society 1994

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References

1. King, C.A., Hoyt, J.L., and Gibbons, J.F., IEEE Trans. ED. 36 (10), 2093 (1989).CrossRefGoogle Scholar
2. Patton, G.L., Comfort, J.H., Meyerson, B.S., Crabbe, E.F., Scilla, G.J., Fresart, E. de, Stork, J.M.C., Sun, J.Y.-C., Harame, D.L., and Burghartz, J.N., IEEE EDL 11 (4), 171 (1990).CrossRefGoogle Scholar
3. Cressler, J.D., Comfort, J.H., Crabbe, E.F., Sun, J.Y.-C., and Stork, J.M.C., Symp. on VLSI Tech., Dig. of Tech. Papers, 102 (1992).Google Scholar
4. Temkin, H., Bean, J.C., Antreasyan, A., and Leibenguth, R., Appl. Phys. Lett. 52, 1089 (1988).Google Scholar
5. Tatsumi, T., Hiriyama, H., and Aizaki, N., Appl. Phys. Lett. 52, 895 (1988).Google Scholar
6. Xu, D. -X., Shen, G. -D., Willander, M., Ni, W. -X., and Hansson, G.V., Appl. Phys. Lett. 52, 2239 (1988).Google Scholar
7. Hull, R., Bean, J.C., Bonar, J.M., Higashi, G.S., Short, K.T., Temkin, H., and White, A.E., Appl. Phys. Lett. 56, 2445 (1990).CrossRefGoogle Scholar