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A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

Published online by Cambridge University Press:  10 February 2011

Guo-Ping Ru
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
C. Detavernier
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Blondeel
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
P. Clauws
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
R. L. Van Meirhaeghe
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
F. Cardon
Affiliation:
Department of Solid State Science, University of Gent, B-9000 Gent, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Also at INSYS, K U. Leuven, B-3001 Leuven, Belgium
Xin-Ping Qu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Shi-Yang Zhu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Bing-Zong Li
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
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Abstract

Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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