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A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

  • Guo-Ping Ru (a1), C. Detavernier (a2), R. A. Donaton (a3), A. Blondeel (a2), P. Clauws (a2), R. L. Van Meirhaeghe (a2), F. Cardon (a2), K. Maex (a3) (a4), Xin-Ping Qu (a1), Shi-Yang Zhu (a1) and Bing-Zong Li (a1)...


Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.



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