Skip to main content Accessibility help
×
Home

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

  • Guo-Ping Ru (a1), C. Detavernier (a2), R. A. Donaton (a3), A. Blondeel (a2), P. Clauws (a2), R. L. Van Meirhaeghe (a2), F. Cardon (a2), K. Maex (a3) (a4), Xin-Ping Qu (a1), Shi-Yang Zhu (a1) and Bing-Zong Li (a1)...

Abstract

Ballistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

Copyright

References

Hide All
[1] See for example, Mogab, C. J., Dry Etching, in VLSI Technology, ed. Sze, S. M. (McGraw-ill, 1983, Auckland).
[2] Fonash, S. J., J. Electrochem. Soc. 66 3885 (1990).
[3] Ashok, S., Chow, T. P. and Baliga, B. J., Appl. Phys. Lett. 42, 687 (1983).10.1063/1.94073
[4] F, Moghadam, K. and Mu, X. C., IEEE Trans. Electron Devices ED–36, 1602 (1989).10.1109/16.34219
[5] Grusell, E., Berg, S. and Andersson, L. P., J. Electrochem. Soc. 127, 1573 (1980).
[6] Deenapanray, P. N. K., Auret, F. D. and Myburg, G., J Vac. Sci. Technol. B, 16 (1873).
[7] Tung, R. T., Phys. Rev. B, 45 13509(1992).10.1103/PhysRevB.45.13509
[8] Kaiser, W. J. and Bell, L. D., Phys. Rev. Lett. 66 1406 (1988).10.1103/PhysRevLett.60.1406
[9] Bell, L. D. and Kaiser, W. J., Phys. Rev. Lett. 66 2368 (1988).10.1103/PhysRevLett.61.2368
[10] Couillard, J. G., Davies, A. and Craighead, H. G., .J. Vac. Sci. Technol. B1O, 3112 (1992).10.1116/1.585939
[11] Quattropani, L., Solt, K., Niedermann, P., -Aprile, I. M., Fischer, O. and Pavelka, T., Appl. Surf Sci. 70/71, 391 (1993).10.1016/0169-4332(93)90463-L
[12] Donaton, R. A., Jin, S., Bender, H., Zagrebnov, M., Baert, K., Maex, K., Vantomme, A., Langouche, G., Microelectron. Eng. 37/38, 507 (1997).
[13] Sze, S. M., Physics of Semiconductor Devices (Wiley, 1981).
[14] Shannon, J. M., Appl. Phys. Lett. 24, 369 (1974).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed