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Barriers to Strain Relaxation in Epitaxial Fluorides on Si(111)

Published online by Cambridge University Press:  15 February 2011

Weidan Li ,
Steve Hymes ,
Shyam P. Murarka  and
Leo J. Schowalter
Weidan Li
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Steve Hymes
Affiliation:
Center for Integrated Electronics and Material Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Shyam P. Murarka
Affiliation:
Center for Integrated Electronics and Material Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180
Leo J. Schowalter
Affiliation:
Center for Integrated Electronics and Physics Department, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

The mechanical stress of epitaxial SrF2 and CaF2 films on Si(111) substrates has been measured as a function of temperature by the substrate curvature technique. The temperature dependence of the stress in the SrF2 film is interpreted in terms of an energy barrier to dislocation motion. When the strain energy is smaller than the value needed to overcome the barrier, the change in stress is due mainly to elastic deformation. As the temperature change increases, the strain energy becomes large enough to overcome the barrier, at which point plastic deformation initiates. Unlike SrF2, the stress behavior of the CaF2 film for increasing temperature is quite different from its behavior for decreasing temperature. This unusual behavior is not understood at this time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 451
Copyright
Copyright © Materials Research Society 1993

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References

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