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Barriers For Copper Interconnections

Published online by Cambridge University Press:  10 February 2011

S. Simon Wong ,
Changsup Ryu ,
Haebum Lee  and
Kee-Won Kwon
S. Simon Wong
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, wong@ee.stanford.edu
Changsup Ryu
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, wong@ee.stanford.edu
Haebum Lee
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, wong@ee.stanford.edu
Kee-Won Kwon
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305, wong@ee.stanford.edu
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Abstract

The integration of Cu interconnections will require sophisticated structures to prevent Cu from coming into contact with devices. The barriers for Cu also must have good adhesion with dielectric and Cu, and yield desirable microstructure of Cu. This paper discusses several critical barrier requirements and compares the properties of Ta and Ti/TiN barrier systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 75
Copyright
Copyright © Materials Research Society 1998

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References

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