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Barrier Metal Ions Drift into Porous Low k Dielectrics under Bias-Temperature stress

  • Ming He (a1), Ya Ou (a2), Pei-I Wang (a3), Lakshmanan H Vanamurthy (a4), Hassaram Bakhru (a5) and Toh-Ming Lu (a6)...

Abstract

Ta family has been used as barrier to prevent Cu diffusion into interlayer dielectric in IC applications. Recent experiments demonstrated a more severe flatband voltage shift (ΔVFB) occurred for Ta/porous low k dielectrics/Si capacitors compared to that of Cu/porous low k dielectrics/Si capacitors after a moderate bias temperature stress (BTS). The flatband voltage shift under BTS was interpreted as the penetration of Ta ions into porous low k dielectrics. However, this interpretation has been under debate. In this paper, by using Secondary Ion Mass Spectrometry (SIMS) backside sputter depth profile technique, we report a direct evidence of Ta ions inside porous methyl silsesquioxane (MSQ) in a Ta/MSQ/Si structure after BTS.

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Barrier Metal Ions Drift into Porous Low k Dielectrics under Bias-Temperature stress

  • Ming He (a1), Ya Ou (a2), Pei-I Wang (a3), Lakshmanan H Vanamurthy (a4), Hassaram Bakhru (a5) and Toh-Ming Lu (a6)...

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