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Bandgap Engineering in Hydrogenated Silicon Films Made by Combined Hydrogen Dilution and Atomic Hydrogen Treatments

Published online by Cambridge University Press:  01 January 1993

K.C. Hsu  and
H.L. Hwang
K.C. Hsu
Affiliation:
Department of Electrical Engineering,, National Tsing—Hua University,, Hsin—Chu,, Taiwan, 30043, R.O.C.
H.L. Hwang
Affiliation:
Department of Electrical Engineering,, National Tsing—Hua University,, Hsin—Chu,, Taiwan, 30043, R.O.C.
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Abstract

Effective bandgap modifications of hydrogenated silicon are demonstrated in this work. These films were obtained by (combined) hydrogen dilution and atomic hydrogen treatments during the deposition. The Si—H bonding configurations were characterized by NMR measurements. The hydrogen dilution tends to create a very sharp line-shape in the NMR spectra as the dilution ratio is increased and the addition of atomic hydrogen treatment can produce the same NMR spectra even at a lower temperature. The optical bandgap of these Si:H samples showed the same tendency that the bandgap narrowed as both the dilution ratio was increased and the addition of atomic hydrogen treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 67
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Hamasaki, T., Kurata, H., Hirose, M.,and Osaka, Y., Appl. Phys. Lett., 37, 1084 (1980).Google Scholar
[2] Spear, W. E., Willeke, G., LeComber, P. G., and Fitzgeral, A. G., Physique, J., 42, NC2, 257 (1981).Google Scholar
[3] Matsuda, A., J. Non. Cryst. Solid, 59&60, 767 (1983)Google Scholar
[4] Tsai, C. C., Anderson, G. B., Thompson, R. and B. Wacker, , J. Non. Cryst. Solid, 114, 151 (1989); 137&138, 673 (1991).Google Scholar
[5] Hsu, K. C. and Hwang, H. L., Appl. Phys. Lett., 61, 2075 (1992).Google Scholar
[6] Hsu, K. C., Chang, H., and Hwang, H. L., J. Appl. Phys. May Issue (1993).Google Scholar
[7] Hsu, K. C., Chang, H., and Hwang, H. L., Proc. Mat. Res. Soc. Symp., Fall Meeting, 1992 (in Press).Google Scholar
[8] Shirai, H., Hanna, J., and Shimizu, I., Jpn. J. Appl. Phys. 30, 1779(1991).Google Scholar