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The Band Offsets of Isomeric Boron Carbide Overlayers

  • A. N. Caruso (a1), P. Lunca-Popa (a1) (a2), Y. B. Losovyj (a3), A. S. Gunn (a2) and J. I. Brand (a2)...

Abstract

Semiconducting boron carbide overlayers, formed from the decomposition of orthocarborane and metacarborane have been studied by angle resolved photoemission. The incurrence of surface photovoltage and the photovoltaic process, from the photoemission experiment, reveal band offsets in the orthocarborane multilayer configurations that are invereted relative to single layer configurations. Defect induced gap states which trap charge at the heterostructure interface is used as one explanation of these results. The role of defects is also used to help illuminate why opposite semiconducting type materials are formed from the decomposition of isomer carborane molecules.

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The Band Offsets of Isomeric Boron Carbide Overlayers

  • A. N. Caruso (a1), P. Lunca-Popa (a1) (a2), Y. B. Losovyj (a3), A. S. Gunn (a2) and J. I. Brand (a2)...

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