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Band Engineering of Partially Exposed Carbon Nanotube Field-Effect Transistors

  • Xiaolei Liu (a1), Zhicheng Luo (a1), Song Han (a1), Tao Tang (a1), Daihua Zhang (a1) and Chongwu Zhou (a1)...

Abstract

We present a new approach to engineer the band structure of carbon nanotube field-effect transistors via selected area chemical gating. By exposing the center part or the contacts of the nanotube devices to oxidizing or reducing gases, a good control over the threshold voltage and subthreshold swing has been achieved. Our experiments reveal that NO2 shifts the threshold voltage higher while NH3 shifts it lower for both center-exposed and contact-exposed devices. However, modulations to the subthreshold swing are in opposite directions for center-exposed and contact-exposed devices: NO2 lowers the subthreshold swing of the contact-exposed devices, but increases that of the center-exposed devices; In contrast, NH3 reduces the subthreshold swing of the center-exposed devices, but increases that of the contact-exposed devices. A model has been developed based on Langmuir isotherm, and the experimental results can be well explained.

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Band Engineering of Partially Exposed Carbon Nanotube Field-Effect Transistors

  • Xiaolei Liu (a1), Zhicheng Luo (a1), Song Han (a1), Tao Tang (a1), Daihua Zhang (a1) and Chongwu Zhou (a1)...

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