Hostname: page-component-7c8c6479df-5xszh Total loading time: 0 Render date: 2024-03-28T19:08:17.811Z Has data issue: false hasContentIssue false

Avalanche Multiplication of Photo-Generated Carriers in Amorphous Semiconductor, and its Application to Imaging Device

Published online by Cambridge University Press:  26 February 2011

Y. Takasaki
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
K. Tsuji
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
T. Hirai
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
E. Maruyama
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, JAPAN
K. Tanioka
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
J. Yamazaki
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
K. Shidara
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
K. Taketoshi
Affiliation:
NHK Science and Technical Research Laboratories, Setagaya, Tokyo 157, Japan
Get access

Abstract

It has been confirmed that avalanche multiplication occurs in amorphous semiconductors, especially in amorphous selenium. The obtained hole and electron ionization rates, β and α, have single exponential dependence on the reciprocal electric field. This phenomenon has been successfully applied for the first time to a highly-sensitive image-pickup tube with quantum efficiency as high as 10. This avalanche vidicon has excellent S/N characteristics. This may be due to the large ratio of hole to electron ionization rates from the shot noise analysis.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ovshinsky, S.R., Phys. Rev. Lett. 21, 1450 (1968).Google Scholar
2. Fritzsche, H., in Amorphous and Liquid Semiconductors, edited by Tauc, J. (Plenum Press, London and New York 1974), Chap.6.Google Scholar
3. Mott, N.F., Phil. Mag. 24, 914 (1972).Google Scholar
4. Hindley, N. K., J. Non-Cryst. Solids 5, 17 (1970).Google Scholar
5. Tanioka, K., Yamazaki, J., Shidara, K., Taketoshi, K., Kawamura, T., Ishioka, S. and Takasaki, Y., IEEE Electron Device Lett. EDL–8, 388 (1987).Google Scholar
6. Taketoshi, K., Tanioka, K. and Kawamura, T., Jpn. J. Appl. Phys. 26, 1648 (1987).Google Scholar
7. Tsuji, K., Takasaki, Y., Hirai, T., Yamazaki, J. and Tanioka, K., Extended Abstracts of 19th Conf. on Solid State Devices and Materials, Tokyo, 1987, pp. 91–94.Google Scholar
8. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Willey and Sons, New York and London 1981), Chap. 10.Google Scholar
9. Pai, D.M. and Enck, R.C., Phys. Rev. B 11, 5163 (1975).Google Scholar
10. McIntyre, R.J., IEEE Trans. on Electron Devices ED–13 164, (1966).Google Scholar